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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION *Good Linearity of hFE *High Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A *Complement to Type 2SC2690/A APPLICATIONS *Adudio frequency power amplifier *High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER 2SA1220 VCBO Collector-Base Voltage 2SA1220A 2SA1220 VCEO Collector-Emitter Voltage 2SA1220A VEBO IC ICM IB B VALUE -120 UNIT V -160 -120 V -160 -5 -1.2 -2.5 -0.3 1.2 W 20 150 -55~150 V A A A Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25 PC Total Power Dissipation @ TC=25 TJ Tstg Junction Temperature Storage Temperature Range isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1220/A TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A B -0.7 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.2A B -1.3 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -1.0 A IEBO Emitter Cutoff Current VEB= -3V; IC=0 -1.0 A hFE-1 DC Current Gain IC= -5mA ; VCE= -5V 35 hFE-2 DC Current Gain IC= -0.3A ; VCE= -5V 60 320 fT Current-Gain--Bandwidth Product IC= -0.2A ; VCE= -5V 175 MHz COB Output Capacitance IE= 0; VCB= -10V;ftest= 1.0MHz 26 pF hFE-2 Classifications R 60-120 Q 100-200 P 160-320 isc Websitewww.iscsemi.cn 2 |
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